V. I. Gavrilenko List of Publications

Books and Book chapters

 

Gavrilenko, A. V., Black S., Sykes A. C., Bonner C. E., and Gavrilenko V. I. Computations of Ground State and Excitation Energies of Poly(3-methoxy-thiophene) and Poly(thienylene vinylene) from First Principles. In: Lecture Notes in Computational Science, Ed. by M. Bubak et al., Springer-Verlag, Berlin Heidelberg, 2008, Part II, LNCS 5102, p.396;
Noginov M. A., Zhu G., Gavrilenko V. I. Nonlinear Emission of Au Nanoparticles Enhanced by Rhodamine 6G Dye. In: Nonlinear Optics and Applications. Ed. by H. A. Abdeldayem and D. O. Frazier. Research Signpost (2007).
Gavrilenko V. I. Ab initio Modeling of Optical Properties of Organic Molecules and Molecular Complexes. In: Lecture Notes in Computer Science. ICCS-2006, Part III. Ed. by V. N. Alexandrov et al. Springer (2006), p. 89
  Gavrilenko V. I., Grekhov A. M., Korbutjak D. V., and Litovchenko V. G. Optical Properties of Semiconductors. Handbook. Naukova Dumka, Kiev, 1987 (in Russian).
  Gavrilenko V. I. and Popov V. G. Ion Implantation in Semiconductor Technology. Znanie, Kiev 1984 (in Russian)
  Popov V. G. and Gavrilenko V. I. Laser Annealing in Integrated Electronics. (Znanie, Kiev, 1980)

 

Peer Reviewed Journals

 

Gavrilenko A. V., Matos T. D., Bonner C. E., Sun S.-S., Zhang C., and Gavrilenko V. I. Optical Absorption of Poly (thienylene vinylene) - Conjugated Polymers: Experiment and First Principles Theory. J. Phys. Chem. C 112, 7908 (2008)
Gavrilenko V. I.  Differential Reflectance and Second-Harmonic Generation of the Si/SiO2 Interface from First Principles. Phys. Rev. B 77, 155311 (2008)
Noginova N., McClure J., Gavrilenko V. I., and Novikov D.  Thermally and Electrically Induced Switching in Manganese Doped Perovskites. J. Phys. D: Appl. Phys. 41, 055411 (2008)
Noginov M. A., G. Zhu, and Gavrilenko V. I.  Sensitized Nonlinear Emission of Gold Nanoparticles. Optics Express 15, 15648 (2007)
G. Zhu, Gavrilenko V. I. and Noginov M. A. Emission of Au Nanoparticles with and without Rhodamine 6G. J. Chem. Phys. 127, 104503 (2007)
Gavrilenko V. I. and Noginov M. A. Ab initio Study of Optical Properties of Rhodamine 6G Molecular Dimers. J. Chem. Phys. 124, 44301 (2006)
Noginov M. A., Vondrova M., Williams S. M., Bahoura M., Gavrilenko V. I., Black S. M., Drachev V. P., Shalaev V. M., Sykes A. Spectroscopic Studies of Liquid Solutions of R6G Laser Dye and Ag Nanoparticle Aggregates. J. Opt. A, 6, 2005, S219-S229
  Gavrilenko V. I. Ab initio Theory of Second Harmonic Generation of Si-SiO2. Bulletin of American Physical Society, 48, 2003, p 420
Gavrilenko V. I. and Wu R. Q. Second Harmonic Generation of GaN(0001). Phys. Rev. B, 65, 35405 (2002)
Gavrilenko V.I. Ab initio Theory of Second Harmonic Generation from Semiconductor Surfaces and Interfaces.  Physica Status Solidi (a) 188, 1267 (2001)
Gavrilenko V. I. and Wu R. Q. Magnetostriction and Magnetism of Rare Earth Intermetallic Compounds: First Principle Study. J. Appl. Phys., 89, 7320 (2001)
Downer M. C., Mendoza B. S., and Gavrilenko V. I. Optical Second Harmonic Spectroscopy of Semiconductor Surfaces: Advances in Microscopic Understanding. Review. Surface and Interface Analysis. 31, 966 (2001)
Gavrilenko V. I., Wu R. Q., Downer M. C., Ekerdt J. G., Lim D., and Parkinson P. Optical Second Harmonic Spectra of Si(001) with H and Ge adatoms: First Principles Theory and Experiment. Phys. Rev. B 63, 165325 (2001)
Lim D., Downer M. C., Ekerdt J. G., Arzate N., Mendoza B. S., Gavrilenko V. I., Wu R. Q., Optical Spectroscopy of Boron-Reconstructed Si(001). Phys. Rev. Lett. 84, 3406 (2000)
Gavrilenko V. I. and Wu R. Q. Linear and Non-Linear Optical Properties of Group-III Nitrides. Phys. Rev. B, 61, 2632 (2000)
Gavrilenko V. I. and Wu R. Q. Energy Loss Spectra of Group III Nitrides, Appl. Phys. Lett. 77, 3042 (2000)
Gavrilenko V. G., Wu R. Q., Downer M. C., Ekerdt J. G., Lim D., and Parkinson P. Optical Second Harmonic Spectra of Silicon- adatom Surfaces: Theory and Experiment. Thin Solid Films 364, 1-5 (2000)
Yang Z., Gavrilenko V. I., and Wu R. Q. First-Principle Study of the Atomic Structure and Magnetic Properties of Ultrathin Ni Films on Cu(001) Substrate. Surf. Sci., 447, 212 (2000)
  Downer M. C., Ekerdt J. G., Lim D., Parkinson P., Gavrilenko V. I., Wu R. Q., Arzate N., and Mendoza B. S. Second Harmonic Spectroscopy of Si Surfaces with H, Ge, and B Adsorbates: Experiment and Theory. IEEE TOPS 46, 22 (2000)
Gavrilenko V. I. and Wu R. Q. Magneto-Optical Properties of FeAu Alloys and Fe/Au Superlattices. J. Appl. Phys., 85, 5112 (1999)
Gavrilenko V. I. and Wu R. Q. Effect of Cu Coverage on the Magnetic Anisotropy of Co/Cu(001). Phys. Rev. B, 60, 9539 (1999)
Gavrilenko V. I. and Pollak F. Surface-Induced Optical Anisotropy of the (001) and (113) Silicon Surfaces. Phys. Rev. B 58, 12964 (1998)
Gavrilenko V. I., and Bechstedt F. Theory of Reflectance Anisotropy of Clean and Hydrogenated (001) Diamond Surfaces. Phys. Rev. B 56, 3903 (1997)
Adolph B., Tenelsen K., Gavrilenko V. I., and Bechstedt F. Optical and Loss Spectra of SiC Polytypes from ab initio Calculations. Phys. Rev. B 55, 1422 (1997)
Gavrilenko V. I., and Bechstedt F. Optical Functions of Semiconductors beyond Density Functional Theory and Random Phase Approximation. Phys. Rev. B 55, 4343 (1997)
Adolph B., Gavrilenko V. I., Tenelsen K., Bechstedt F., and Del Sole R. Nonlocality and Many-Body Effects in the Optical Properties of Semiconductors. Phys. Rev. B 53, 9797 (1996)
Gavrilenko V. I., and Bechstedt F. Local Field and Exchange Correlation Effects in Optical Spectra of Semiconductors. Phys. Rev. B 54, 13416 (1996)
Gavrilenko V. I. and Rebentrost F. Nonlinear Optical Susceptibility of the Surfaces of Silicon and Diamond. Surf. Sci., 331-335, 1355 (1995)
  Gavrilenko V. I. and Rebentrost F. Nonlinear Optical Susceptibility of the (111) and (001) Surfaces of Silicon. Appl. Phys. A 60, 143 (1995)
Gavrilenko V. I. and Koch F. Electronic Structure of Nanometer-Thickness Si(001) Film. J. Appl. Phys. 77, 3288 (1995)
Gavrilenko V. I. and Shkrebtii A. I. Anisotropy of Optical Reflectance of the (001) Surface of Diamond. Surf. Sci. 324, 226 (1995)
Gavrilenko V. I. Calculated Differential Reflectance of the (110) Surface of Cubic Silicon Carbide. Appl. Phys. Lett. 67, 16 (1995)
Gavrilenko V. I. Adsorption of Hydrogen on the (001) Surface of Diamond. Phys. Rev. B 47, 9556 (1993)
  Gavrilenko V. I., Frolov S. I., and Klyui N. I. Electronic Band Structure and Optical Properties of Cubic Silicon Carbide Crystals. Physica B 185, 394 (1993)
  Frolov S. I. and Gavrilenko V. I. Optical Properties of Carbon Films in Visible and Near-Infrared Optical Regions. Ukrainian Journal of Physics, 36, 510 (1991)
Trallero-Ginner C., Cantarero A., Cardona M., and Gavrilenko V. I. One-Phonon Resonant Raman Scattering in AlxGa1-xGa. Phys. Rev. B 42, 11875 (1990)
Gavrilenko V. I., Martines D., Cantarero A., Cardona M., and Trallero-Ginner C. Resonant First- and Second-Order Raman Scattering in AlSb. Phys. Rev. B 42, 11718 (1990)
  Gavrilenko V. I., Postnikov A. V., Klyui N. I., and Litovchenko V. G. Energy Band Structure and Optical Properties of Wurtzite-Structure Silicon Carbide Crystals. Physica Status Solidi (b) 162, 477 (1990)
  Brodin A. M., Valakh M. Ya., Gavrilenko V. I., Lisitsa M. P., Litvinchuk A. P., Litovchenko V. G., and Ploog K. Multiphonon Resonant Raman Scattering and Effects of Tunneling of Electronic Excitations in Short Period GaAs-AlAs Superlattices. JETP Lett. 51, 157 (1990)
  Gavrilenko V. I., Frolov S. I., and Pidlisnyj E. V. Optical Properties of Graphite-Like Carbon Films. Thin Solid Films, 190, 255 (1990)
  Gavrilenko V. I., Humlicek J., Klyui N. I., and Litovchenko V. G. Electron Energy Structure and Optical Properties of Microcrystalline Silicon. Physica Status Solidi (b). 155, 723 (1989)
C. Trallero-Ginner, Gavrilenko V. I., and Cardona M. Resonant Raman Scattering by LO Phonons in AlxGa1-xAs ( 0.2 < x < 0.7 ): Exciton Broadening and Alloying Effects. Phys. Rev. B 40, 1238 (1989)
  Gavrilenko V. I., Klyui N. I., Litovchenko V. G., and Romanyuk B. N. Investigation of Ion Implanted Silicon by Electroreflectance Spectroscopy. Physica Status Solidi (a), 112, 805 (1989)
  Gavrilenko V. I., Trallero-Ginner C., Cardona M., and Bauser E. Deformation Potential LO-Phonon Raman Scattering Near the Eo-Gap in AlxGa1-xAs Alloy. Excitonic Effects. Solid State Communications. 67, 459, (1988)
  Gavrilenko V. I., Klyui N. I., Litovchenko V. G., and Strelnitskii V. E. Characteristic Features of the Electronic Structure of Carbon Films. Physics Status Solidi (b) 145, 209 (1988)
  Gavrilenko V. I., Klyui N. I., Litovchenko V. G., and Strelnitskii V. E. Electroreflectance of Amorphous Hydrogenated Carbon Films. Soviet Physics -Semiconductors 22, 1302 (1988)
  Gavrilenko V. I. Electronic Structure and Optical Properties of Polycrystalline Cubic Semiconductors. Physica Status Solidi (b) 139, 457 (1987)
  Gavrilenko V. I., Klyui N. I., Litovchenko V. G., Padalka V. G., and Strelnitskii V. E. Electron Energy Structure of Carbon Films. Soviet Physics - Solid State Physics 29, 3449 (1987)
  Akimchenko I. P., Barmin Yu., V., Vavilov V. S., Zolotuchin I. V., Gavrilenko V. I., and Litovchenko V. G. Optical Properties of InP. Thin Solid Films, 138, 21 (1986)
  Gavrilenko V. I., Gorban I. S., Klyui N. I., Litovchenko V. G., Skirda A. S. Electroreflectance of Silicon Carbide in Visible and Near Infrared Range. Soviet Physics – Semiconductors, 18, 791 (1984)
  Akimchenko I. P., Barmin Yu., V., Vavilov V. S., Gavrilenko V. I., Zolotuchin I. V., and Litovchenko V. G. Optical Properties and Structure of a-Si Films Separated from their Substrates. Soviet Physics - Semiconductors,  18,1334 (1984)
  Grekhov A. M., Gavrilenko V. I., and Litovchenko V. G. Modeling of Electron Structure of a-Si:H by Atomic Clusters. Reports of the Academy of Science of the USSR, 63, 211 (1984)
  Gavrilenko V. I., Zuev V. A., Klyui N. I., Litovchenko V. G., and Fedotov V. G. Electroreflection of monoclinic ZnP2 Crystals. Soviet Physics - Semiconductors, 18, 1072 (1984)
  Gavrilenko V. ., Gorban I.S., Klyui N. I., Litovchenko V. G., and Skirda A. S. Electroreflection of Silicon Carbide in Visible and near Infrared Parts of the Spectrum. Soviet Physics - Semiconductors,,  18,791 (1984)
  Grekhov A. M., Gavrilenko V. I., Klaptchenko G. M., and Tsyashchenko Yu. P. Statistical Cluster Model of Amorphous Hydrogenated Silicon. Ukrainian Journal of Physics,   29, 539 (1984)
  Gavrilenko V. I., Zuev V. A., Kalandadze T. M., Litovchenko V. G., and Popov V. G.. Optical Characteristics of Implanted Silicon Films. USSR Universities Reports,  Physics. 27, 40 (1984)
  Gavrilenko V. I., Grekhov A. M., Katrich G.A., Klimov V. V., and Litovchenko V. G. Ultraviolet Photoelectron Spectroscopy of Amorphous Hydrogenated Silicon. Soviet Physics – Semiconductors. 17, 1045 (1983)
  Gavrilenko V. I., Zuev V. A., Kalandadze T. M., Litovchenko V. G., Popov V. G. Energy Band Structure of Surface Layers of Silicon Implanted Films. Soviet Physics - Surf. Sci., No13, 104 (1983)
  Gavrilenko V. I., Litovchenko V. G., Popov V. G., Svechnikov S. V., and Utkin-Edin S. V. Study of Some Active Treatments on Characteristics of Hydrogenated Amorphous Silicon Surface. Soviet Physics - Surf. Sci. No 11,106 (1983)
  Gavrilenko V. I., Grekhov A. M., Katrich G. A., Klimov V. V., and Litovchenko V. G.. Effect of Structural Disorder on Valence Electron Energies in Silicon. Soviet Physics - Semiconductors , 9, 1321 (1983)
  Gavrilenko V. I., Gorban I. S., Litovchenko V.G., and Skirda A.S. Electroreflection of Some Rombohedral Polytypes of Silicon Carbide. Soviet Physics -Semiconductors,  16, 109 (1982)
  Gavrilenko V.I, Zuev V.A., and Litovchenko V.G. Influence of Near-the-Surface Located Disordered Layers on the Electroreflection Spectra of the Au-SiO2 -Si Structure with Tunnel-Thin Oxide. USSR Universities Reports, Physics, 25, 117 (1982)
  Gavrilenko V.I., Zuev V.A., Ivanijchuk M.T., Korbutyak D.V., and Litovchenko V.G. Electroreflection Spectra of Intercalated GaSe Crystals. Soviet Physics - Solid State, 23, 511 (1981)
  Litovchenko V.G., Zuev V.A., Korbutyak D.V., and Gavrilenko V.I. Optical and Luminescent Properties of Ion-Implanted Films. Thin Solid Films, 66, 255 (1980)
  Gavrilenko V.I. and Ruban M.A. Low-Frequency Lock-in Amplifier. Soviet Physics. - Instruments and Experimental Techniques.  22, 476 (1979)
  Gavrilenko V.I., Zuev V.A., Kalandadze T.M., and Popov V.G.. Correlation between Electro-optical and Electrical Parameters of the Epitaxial Silicon Films Ukrainian Journal of Physics. 23, 854 (1978)
  Gavrilenko V.I., Zuev V.A., Katrich G.A., and Tarashchenko D.T. Electroreflection of Hexagonal (6H) and Cubic Silicon Carbide Single Crystals. Soviet Physics - Semiconductors 12, 959 (1978)
  Almazov L.A., Gavrilenko V.I, Zuev V.A., and Litovchenko V.G. Electroreflection Spectra of Implantation-Doped Silicon.  Soviet Physics - Semicond. 12, 913 (1978)
  Gavrilenko V.I. and Zuev V.A. Characteristics of the Energy Band Structure of Ion-Bombarded Layers of GaAs and GaP. Soviet Physics - Semiconductors 12, 570 (1978)
  Gavrilenko V.I., Zuev V.A., and Litovchenko V.G. Electroreflection Investigation of Departures from Short-Range  Order in Surface Layer in Silicon. Soviet Physics - Solid State. 19, 333 (1977)
  Gavrilenko V.I., Ignatkov V.D., Kalandadze T.M., Litovchenko V.G., and Zuev V.A. Electroreflectance Spectra of Thin Silicon Films. Thin Solid Films 37, 201 (1976)
  Gavrilenko V.I., Evstigneev A.M., Zuev V.A., Litovchenko V.G., Snitko O.V., and Tyagai V.A. Electroreflection Investigation of Characteristic of Energy Band Structure of a   Transition   Layer   Near   the   Surface   of  Silicon. – Soviet Physics - Semicond. 10, 640 (1976)
  Gavrilenko V.I., Drazhan A.V., Zuev V.A., Korbutyak D.V., and Litovchenko V.G. Influence of Ion-Bombardment on Electroreflection and Photoluminescence Spectra of n-Type AlxGa1-xAs Solid Solutions – Soviet Physics - Semicond. 10, 185 (1976)
  Bletskan D.I., Gavrilenko V.I., Zuev V.A., Kopinets I.F., and Litovchenko V.G. Electroreflectance of SnSe Single Crystals.  Sov.Physics - Semiconductors  9, 1321 (1975)
  Gavrilenko V.I., Dubchak A.P., Zuev V.A., Litovchenko V.G., and Lysenko V.S. Electroreflectance Spectra of the Surface of Ion-Bombarded Silicon. Soviet Physics - Semiconductors 9, 460 (1975)
  Gavrilenko V.I., Zuev V.A., and Litovchenko V.G. Effect of Ion-Implantation on Electroreflectance spectra of SiO2-Si Structure. Ukrainian Journal of Physics, 20, 1868 (1975)
  Dobrovolsky V.N., Ninidze G.K., and Gavrilenko V.I. Space Charge Capacity at the InSb Surface   under   degeneration of the electron gas. Ukrainian Journal of Physics, 20, 1824 (1975)
  Zuev V.A., Gorban A.P., Peikov P.Kh., Gavrilenko V.I., Romanyuk B.N., and Sukach G.A. Electronic and Optical   properties of   SiO2 -Si   Structure. Ukrainian Journal of Physics,  19, 88 (1974)

Goto: Books and Book chapters, Peer Reviewed Journals, Proceedings, Patents  

Proceedings

 

  Kolasinski K. W., Harrison I., Gavrilenko A. V., Bonner C. E., Gavrilenko V. I. Characterization of Chemisorption on Porous Silicon by Sum Frequency Generation. Proc. of SPIE, vol. 6320, 63200Q (2006)
  Bonner C. E., Jr., Charter S., Lorts A., Adebola O. I., Zhang C., Sun S.-S., Gavrilenko V. I. Luminescence and Optical Absorption of Conjugated Poly-Phenylene-Vinylene Polymers. Proc. of SPIE, vol. 6320, 63200J (2006)
  Gavrilenko V. I., Bonner C. E., Jr.  Optical Properties of Conjugated Poly-Phenylene-Vinylene Polymers. Proc. of SPIE, vol. 6328, 63280W (2006)
  Gavrilenko V. I. Ab initio Molecular Dynamics and Optical Properties of Organic Molecular Aggregates and Molecular Crystals. Invited. Int. Conference on Classical and Quantum Dynamical Simulations in Chemical and Biological Physics, Dresden, Germany, June 2005
  Arrington-Peet S., Rakhimov R. R., Gavrilenko V. I. Electron Paramagnetic Resonance and Equilibrium Atomic Configurations Studies of Binuclear Niobium Molecules in Li-Nb Phosphate Glass Dielectrics. – Bulletin of American Chemical Society, 2005
  Noginova N., Chen F., Chelule G., and Gavrilenko V. I. Optical, Magnetic and Transport Effects in LaGa1-xMnxO3: Experiment and Modeling. Material Research Society Symposium Proceedings, 295, 407, 2005
Gavrilenko V.I. Ab initio Theory of Second Harmonic Generation from Semiconductor Surfaces and Interfaces. Invited. International Conference on Optics of Solid Interfaces, OSI-2001. Physica Status Solidi (a) 188, 1267 (2001)
  Downer M. C., Jiang Y., Lim D., Mantese L., Wilson P. T., Mendoza B. S., and Gavrilenko V.I. Optical Second Harmonic Spectroscopy of Silicon Surfaces, Interfaces, and Nano-crystals. Invited. International Conference on Optics of Solid Interfaces, OSI-2001. Physica Status Solidi (a) 188, 1371 (2001)
  Freeman A. J., Wu R. Q., Kim M., and Gavrilenko V. I. Magnetism, Magneto-Crystalline Anisotropy, Magnetostriction and MOKE at Surfaces and Interfaces. Proceedings of the 1998 International Conference on Magnetism of Nano-structured Phases. J. Magnetism and Magnetic Materials 203, 1, (1999)
  Adolph B., Tenelsen K., Gavrilenko V. I., and Bechstedt F. Ab initio Calculations of the Optical Properties of Semiconductors. Proceedings of 23d International Conference on Physics of Semiconductors, World Scientific, 1996, p. 313
  Gavrilenko V. I., Vogl P., and Koch F. Influence of Hydrogen Adsorption on the Electron Energy Structure and Densities of States of Si(001) Surface. Application to Porous Silicon. Proceedings of 4th International Conference on Formation of Semiconductor Interfaces. World Scientific, 1994, p.130
  Gavrilenko V. I. Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen. Proceedings of 17-th International Conference on Defects of Semiconductors, ICDS-17, Gmunden, Austria, 1993, p. 111
  Gavrilenko V. I., Vogl P., and Koch F. Calculation of the Energy Spectrum of Nanometer Sized Silicon. Material Research Society Symposium Proceedings, 283, 1993, p.431
  Koch F., Petrova-Koch V., Muschik T., Kux A., Mueller F., Gavrilenko V. I., and Moeller F. Thermal Oxidation of Luminescent Porous Si and its Implications for the Mechanism of Light Emission. Proceedings of 21st International Conference on Physics of Semiconductors. World Scientific, 1992, p. 220
  Petrova-Koch V., Muschik T., Gavrilenko V. I., and Koch F.,. Ton the Mechanism of Light Emission from Porous Silicon. Proceedings of 21st International Conference on Physics of Semiconductors. World Scientific, 1992, p. 272
  Gavrilenko V. I., Frolov S. I., and Litovchenko V. G. Optical Spectroscopy of Polycrystalline Materials: Theory and Experiment on Group IV Materials. In Polycrystalline Semiconductors II. Springer Proceeding in Physics, Vol. 54, 1991, p.379
  Contarero A., Martinez D., Gavrilenko V. I.,  Cardona M., and  Trallero-Ginner C. Resonant Raman Scattering by One and Two LO-Phonons in AlSb. Proc.20-th Int. Conf. Phys. Semicond.,  Thessaloniki, Greece (World Scientific) 1990, v.3,p.2025
  Gavrilenko V. I., Litovchenko V. G., and Frolov S. I. Optical Characterization of Poly- and Microcrystalline  Semiconductors. 35. Intern. Sci., Meeting, Technical University of  Ilmenau, Germany), 1990, p.77
  Gavrilenko V. I. and Frolov  S. I. Band Structure and Optical Properties of Silicon Carbide. SPIE’s International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications. Aachen, Germany, SPIE, 1990
  Trallero-Ginner C., Gavrilenko V. I., and Cardona M. Deformation Potential Raman Scattering near the Eo-Gap in AlGaAs Alloy. Proceedings of XI-th International Conference on Raman Spectroscopy, London, 1988, p.333
  Gavrilenko V. I., Humlicek J., Garriga M., Klyui N. I., and Litovchenko V. G. Optical Properties and Electronic Structure of Microcrystalline and Amorphous Silicon. Proc 19-th Int. Conf. Phys. Semicond. (Warsaw, 1988) v.2, p.1653
  Gavrilenko V. I., Grekhov A. M., Katrich G. A., and Litovchenko V. G. Structural Defect Analysis of Ion-Implanted Bulk  and Amorphous Silicon using Optical and Photoelectron  Spectroscopy. Proc. 7-th Int. Conf. Ion Implantation. (Vilnus, Lithuania, 1985)  p.195
  Gavrilenko V.I., Litovchenko V.G., Popov V.G., and Romanyuk B.N.  Laser Annealing of the Surface Layers of Semiconductors.  Proc. 26-th Int. Sci. Meeting. (Technical University Ilmenau, Germany,  1981), p.71
  Gavrilenko V.I. and Litovchenko V.G. Study of Defects in Ion Implanted Silicon Structures using Modulation Spectroscopy.  Proc. Int. Conf. on “Ion Beam Modifications of  Materials”. (IBMM), (Budapest, Hungary , 1978) p.1054

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Patents

 

  Mueller B., Gavrilenko V.I., Klyui N.I., and Litovchenko V. G. Procedure for the Measurements of Grain-Sizes in Polycrystalline Silicon. Patent DD 256375 AJ. - May 4,1988 (German Democratic Republic)

Goto: Books and Book chapters, Peer Reviewed Journals, Proceedings, Patents

 

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