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V.
I. Gavrilenko List of Publications
Books
and Book chapters
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Gavrilenko, A. V., Black
S., Sykes A. C., Bonner C. E., and Gavrilenko V. I.
Computations of Ground State and Excitation
Energies of Poly(3-methoxy-thiophene) and Poly(thienylene
vinylene) from First Principles.
In: Lecture Notes in Computational Science, Ed. by M. Bubak et
al., Springer-Verlag, Berlin Heidelberg, 2008, Part II,
LNCS 5102, p.396; |
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Noginov M. A.,
Zhu G., Gavrilenko V. I.
Nonlinear Emission of Au Nanoparticles Enhanced by Rhodamine
6G Dye. In: Nonlinear Optics and Applications. Ed. by H. A.
Abdeldayem and D. O. Frazier. Research Signpost (2007). |
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Gavrilenko V. I.
Ab initio
Modeling of Optical Properties of Organic Molecules and
Molecular Complexes. In: Lecture Notes in Computer Science.
ICCS-2006, Part III. Ed. by V. N. Alexandrov et al. Springer (2006), p. 89 |
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Gavrilenko V. I., Grekhov A. M., Korbutjak D. V.,
and Litovchenko V. G. Optical Properties of Semiconductors.
Handbook. Naukova Dumka, Kiev, 1987 (in Russian). |
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Gavrilenko V. I. and Popov V. G.
Ion Implantation in
Semiconductor Technology. Znanie, Kiev 1984 (in Russian) |
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Popov V. G. and Gavrilenko V. I.
Laser Annealing in Integrated
Electronics. (Znanie, Kiev, 1980) |
Peer
Reviewed Journals
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Gavrilenko A.
V., Matos T. D., Bonner C. E., Sun S.-S., Zhang C., and Gavrilenko V. I. Optical
Absorption of Poly (thienylene vinylene) - Conjugated Polymers:
Experiment and First Principles Theory.
J. Phys. Chem. C 112, 7908 (2008) |
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Gavrilenko V. I.
Differential Reflectance and Second-Harmonic Generation of
the Si/SiO2 Interface from First Principles.
Phys. Rev. B 77, 155311 (2008) |
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Noginova N.,
McClure J., Gavrilenko V. I., and Novikov D. Thermally
and Electrically Induced Switching in Manganese Doped
Perovskites.
J. Phys. D: Appl. Phys. 41, 055411 (2008) |
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Noginov M.
A., G. Zhu, and Gavrilenko V. I. Sensitized Nonlinear
Emission of Gold
Nanoparticles.
Optics Express 15, 15648 (2007) |
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G. Zhu,
Gavrilenko V. I. and Noginov M. A. Emission of Au
Nanoparticles with and without Rhodamine 6G.
J. Chem. Phys. 127, 104503 (2007) |
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Gavrilenko V.
I. and Noginov M. A. Ab initio Study of
Optical Properties of Rhodamine 6G Molecular Dimers.
J. Chem. Phys. 124, 44301 (2006) |
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Noginov M. A.,
Vondrova M., Williams S. M., Bahoura M., Gavrilenko V. I., Black S.
M., Drachev V. P., Shalaev V. M., Sykes A. Spectroscopic Studies of Liquid Solutions of R6G Laser Dye and Ag
Nanoparticle Aggregates. J. Opt. A, 6,
2005, S219-S229 |
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Gavrilenko V. I.
Ab initio Theory of Second Harmonic Generation of Si-SiO2.
Bulletin of American Physical Society,
48, 2003, p 420 |
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Gavrilenko V. I.
and Wu R. Q. Second Harmonic Generation of
GaN(0001). Phys. Rev. B, 65, 35405
(2002) |
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Gavrilenko V.I.
Ab initio Theory of Second Harmonic Generation from Semiconductor
Surfaces and Interfaces. Physica Status Solidi (a)
188, 1267 (2001) |
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Gavrilenko V. I.
and Wu R. Q. Magnetostriction and Magnetism of Rare Earth
Intermetallic Compounds: First Principle Study. J. Appl. Phys.,
89, 7320 (2001) |
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Downer M. C.,
Mendoza B. S., and Gavrilenko V. I. Optical
Second Harmonic Spectroscopy of Semiconductor Surfaces: Advances in
Microscopic Understanding. Review.
Surface and Interface Analysis. 31, 966 (2001) |
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Gavrilenko V. I.,
Wu R. Q., Downer M. C., Ekerdt J. G., Lim D., and Parkinson P. Optical Second Harmonic Spectra of Si(001) with H and Ge adatoms:
First Principles Theory and Experiment. Phys. Rev. B 63,
165325 (2001) |
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Lim D., Downer M.
C., Ekerdt J. G., Arzate N., Mendoza B. S., Gavrilenko V. I., Wu R.
Q., Optical Spectroscopy of
Boron-Reconstructed Si(001). Phys. Rev.
Lett. 84, 3406 (2000) |
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Gavrilenko V. I.
and Wu R. Q. Linear and Non-Linear Optical
Properties of Group-III Nitrides. Phys.
Rev. B, 61, 2632 (2000) |
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Gavrilenko V. I.
and Wu R. Q. Energy Loss Spectra of Group III Nitrides, Appl.
Phys. Lett. 77, 3042 (2000) |
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Gavrilenko V. G.,
Wu R. Q., Downer M. C., Ekerdt J. G., Lim D., and Parkinson P. Optical Second Harmonic Spectra of Silicon- adatom Surfaces: Theory
and Experiment. Thin Solid Films 364, 1-5 (2000) |
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Yang Z.,
Gavrilenko V. I., and Wu R. Q. First-Principle Study of the
Atomic Structure and Magnetic Properties of Ultrathin Ni Films on
Cu(001) Substrate. Surf. Sci., 447, 212 (2000) |
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Downer M. C.,
Ekerdt J. G., Lim D., Parkinson P., Gavrilenko V. I., Wu R. Q.,
Arzate N., and Mendoza B. S. Second Harmonic Spectroscopy of Si
Surfaces with H, Ge, and B Adsorbates: Experiment and Theory.
IEEE TOPS 46, 22 (2000) |
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Gavrilenko V. I.
and Wu R. Q. Magneto-Optical Properties of
FeAu Alloys and Fe/Au Superlattices.
J. Appl. Phys., 85, 5112 (1999) |
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Gavrilenko V. I.
and Wu R. Q. Effect of Cu Coverage on the
Magnetic Anisotropy of Co/Cu(001). Phys. Rev. B,
60, 9539 (1999) |
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Gavrilenko V. I.
and Pollak F. Surface-Induced Optical Anisotropy of the (001) and
(113) Silicon Surfaces. Phys. Rev. B 58, 12964 (1998) |
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Gavrilenko V. I., and Bechstedt F.
Theory of
Reflectance Anisotropy of Clean and Hydrogenated (001) Diamond
Surfaces.
Phys. Rev. B 56, 3903 (1997) |
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Adolph B.,
Tenelsen K., Gavrilenko V. I., and Bechstedt F. Optical and Loss
Spectra of SiC Polytypes from ab initio Calculations. Phys. Rev.
B 55, 1422 (1997) |
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Gavrilenko V. I.,
and Bechstedt F. Optical Functions of
Semiconductors beyond Density Functional Theory and Random Phase
Approximation. Phys. Rev. B 55,
4343 (1997) |
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Adolph B.,
Gavrilenko V. I., Tenelsen K., Bechstedt F., and Del Sole R. Nonlocality and Many-Body Effects in the Optical Properties of
Semiconductors. Phys. Rev. B 53, 9797 (1996) |
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Gavrilenko V. I., and Bechstedt F.
Local Field and Exchange
Correlation Effects in Optical Spectra of Semiconductors. Phys.
Rev. B 54, 13416 (1996) |
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Gavrilenko V. I.
and Rebentrost F. Nonlinear Optical Susceptibility of the
Surfaces of Silicon and Diamond. Surf. Sci., 331-335,
1355 (1995) |
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Gavrilenko V. I.
and Rebentrost F. Nonlinear Optical Susceptibility of the (111)
and (001) Surfaces of Silicon. Appl. Phys. A 60, 143
(1995) |
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Gavrilenko V. I.
and Koch F. Electronic Structure of Nanometer-Thickness Si(001)
Film. J. Appl. Phys. 77, 3288 (1995) |
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Gavrilenko V. I.
and Shkrebtii A. I. Anisotropy of Optical Reflectance of the
(001) Surface of Diamond. Surf. Sci. 324, 226 (1995) |
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Gavrilenko V. I.
Calculated Differential Reflectance of the (110) Surface of Cubic
Silicon Carbide. Appl. Phys. Lett. 67, 16 (1995) |
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Gavrilenko V. I.
Adsorption of Hydrogen on the (001) Surface of Diamond. Phys.
Rev. B 47, 9556 (1993) |
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Gavrilenko V. I.,
Frolov S. I., and Klyui N. I. Electronic Band Structure and
Optical Properties of Cubic Silicon Carbide Crystals. Physica B
185, 394 (1993) |
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Frolov S. I. and
Gavrilenko V. I. Optical Properties of Carbon Films in Visible
and Near-Infrared Optical Regions. Ukrainian Journal of Physics,
36, 510 (1991) |
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Trallero-Ginner
C., Cantarero A., Cardona M., and Gavrilenko V. I. One-Phonon
Resonant Raman Scattering in AlxGa1-xGa.
Phys. Rev. B 42, 11875 (1990) |
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Gavrilenko V. I.,
Martines D., Cantarero A., Cardona M., and Trallero-Ginner C. Resonant First- and Second-Order Raman Scattering in AlSb. Phys.
Rev. B 42, 11718 (1990) |
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Gavrilenko V. I.,
Postnikov A. V., Klyui N. I., and Litovchenko V. G. Energy Band
Structure and Optical Properties of Wurtzite-Structure Silicon
Carbide Crystals. Physica Status Solidi (b) 162, 477
(1990) |
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Brodin A. M.,
Valakh M. Ya., Gavrilenko V. I., Lisitsa M. P., Litvinchuk A. P.,
Litovchenko V. G., and Ploog K. Multiphonon Resonant Raman
Scattering and Effects of Tunneling of Electronic Excitations in
Short Period GaAs-AlAs Superlattices. JETP Lett. 51, 157
(1990) |
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Gavrilenko V. I.,
Frolov S. I., and Pidlisnyj E. V. Optical Properties of
Graphite-Like Carbon Films. Thin Solid Films, 190, 255
(1990) |
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Gavrilenko V. I.,
Humlicek J., Klyui N. I., and Litovchenko V. G. Electron Energy
Structure and Optical Properties of Microcrystalline Silicon.
Physica Status Solidi (b). 155, 723 (1989) |
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C. Trallero-Ginner,
Gavrilenko V. I., and Cardona M. Resonant Raman Scattering by LO
Phonons in AlxGa1-xAs ( 0.2 < x < 0.7 ):
Exciton Broadening and Alloying Effects. Phys. Rev. B 40,
1238 (1989) |
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Gavrilenko V. I.,
Klyui N. I., Litovchenko V. G., and Romanyuk B. N. Investigation
of Ion Implanted Silicon by Electroreflectance Spectroscopy.
Physica Status Solidi (a), 112, 805 (1989) |
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Gavrilenko V. I.,
Trallero-Ginner C., Cardona M., and Bauser E. Deformation
Potential LO-Phonon Raman Scattering Near the Eo-Gap in
AlxGa1-xAs Alloy. Excitonic Effects. Solid
State Communications. 67, 459, (1988) |
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Gavrilenko V. I.,
Klyui N. I., Litovchenko V. G., and Strelnitskii V. E. Characteristic Features of the Electronic Structure of Carbon Films.
Physics Status Solidi (b) 145, 209 (1988) |
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Gavrilenko V. I.,
Klyui N. I., Litovchenko V. G., and Strelnitskii V. E. Electroreflectance of Amorphous Hydrogenated Carbon Films.
Soviet Physics -Semiconductors 22, 1302 (1988) |
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Gavrilenko V. I.
Electronic Structure and Optical Properties of Polycrystalline
Cubic Semiconductors. Physica Status Solidi (b) 139, 457
(1987) |
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Gavrilenko V. I.,
Klyui N. I., Litovchenko V. G., Padalka V. G., and Strelnitskii V.
E. Electron Energy Structure of Carbon Films. Soviet Physics
- Solid State Physics 29, 3449 (1987) |
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Akimchenko
I. P., Barmin Yu., V., Vavilov V. S., Zolotuchin I. V., Gavrilenko
V. I., and Litovchenko V. G. Optical Properties of InP. Thin
Solid Films, 138, 21 (1986) |
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Gavrilenko V. I.,
Gorban I. S., Klyui N. I., Litovchenko V. G., Skirda A. S. Electroreflectance of Silicon Carbide in Visible and Near Infrared
Range. Soviet Physics – Semiconductors, 18, 791 (1984) |
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Akimchenko
I. P., Barmin Yu., V., Vavilov V. S., Gavrilenko V. I., Zolotuchin
I. V., and Litovchenko V. G. Optical
Properties and Structure of a-Si Films Separated from their
Substrates. Soviet Physics - Semiconductors,
18,1334 (1984) |
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Grekhov
A. M., Gavrilenko V. I., and Litovchenko V. G. Modeling of
Electron Structure of a-Si:H by Atomic Clusters. Reports of the
Academy of Science of the USSR, 63, 211 (1984) |
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Gavrilenko V. I., Zuev V. A., Klyui N. I., Litovchenko V. G., and Fedotov V. G.
Electroreflection of monoclinic ZnP2 Crystals. Soviet
Physics - Semiconductors, 18, 1072 (1984) |
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Gavrilenko V. ., Gorban I.S., Klyui N. I., Litovchenko V. G., and Skirda A. S.
Electroreflection of Silicon Carbide in Visible and near Infrared
Parts of the Spectrum. Soviet Physics - Semiconductors,,
18,791
(1984) |
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Grekhov
A. M., Gavrilenko V. I., Klaptchenko G. M., and Tsyashchenko Yu. P.
Statistical Cluster Model of Amorphous Hydrogenated Silicon.
Ukrainian Journal of Physics, 29, 539 (1984) |
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Gavrilenko V. I.,
Zuev V. A., Kalandadze T. M., Litovchenko V. G., and Popov V. G.. Optical Characteristics of Implanted Silicon Films. USSR
Universities Reports, Physics. 27, 40 (1984) |
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Gavrilenko V. I.,
Grekhov A. M., Katrich G.A., Klimov V. V., and Litovchenko V. G. Ultraviolet Photoelectron Spectroscopy of Amorphous Hydrogenated
Silicon. Soviet Physics – Semiconductors. 17, 1045 (1983) |
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Gavrilenko V. I.,
Zuev V. A., Kalandadze T. M., Litovchenko V. G., Popov V. G. Energy Band Structure of Surface Layers of Silicon Implanted Films.
Soviet Physics - Surf. Sci., No13, 104 (1983) |
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Gavrilenko V. I.,
Litovchenko V. G., Popov V. G., Svechnikov S. V., and Utkin-Edin S.
V. Study of Some Active Treatments on Characteristics of
Hydrogenated Amorphous Silicon Surface. Soviet Physics - Surf.
Sci. No 11,106 (1983) |
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Gavrilenko V. I.,
Grekhov A. M., Katrich G. A., Klimov V. V., and Litovchenko V. G..
Effect of Structural Disorder on Valence Electron Energies in
Silicon. Soviet Physics - Semiconductors , 9, 1321 (1983) |
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Gavrilenko V. I.,
Gorban I. S., Litovchenko V.G., and Skirda A.S. Electroreflection
of Some Rombohedral Polytypes of Silicon Carbide. Soviet Physics
-Semiconductors, 16, 109 (1982) |
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Gavrilenko V.I,
Zuev V.A., and Litovchenko V.G. Influence of Near-the-Surface
Located Disordered Layers on the Electroreflection Spectra of the
Au-SiO2 -Si Structure with Tunnel-Thin Oxide. USSR
Universities Reports, Physics, 25, 117 (1982) |
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Gavrilenko V.I.,
Zuev V.A., Ivanijchuk M.T., Korbutyak D.V., and Litovchenko V.G. Electroreflection Spectra of Intercalated GaSe Crystals. Soviet
Physics - Solid State, 23, 511 (1981) |
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Litovchenko
V.G., Zuev V.A., Korbutyak D.V., and Gavrilenko V.I. Optical and
Luminescent Properties of Ion-Implanted Films. Thin Solid Films,
66, 255 (1980) |
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Gavrilenko V.I.
and Ruban M.A. Low-Frequency Lock-in Amplifier. Soviet
Physics. - Instruments and Experimental Techniques. 22, 476
(1979) |
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Gavrilenko V.I.,
Zuev V.A., Kalandadze T.M., and Popov V.G.. Correlation between
Electro-optical and Electrical Parameters of the Epitaxial Silicon
Films Ukrainian Journal of Physics. 23, 854 (1978) |
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Gavrilenko V.I.,
Zuev V.A., Katrich G.A., and Tarashchenko D.T. Electroreflection
of Hexagonal (6H) and Cubic Silicon Carbide Single Crystals.
Soviet Physics - Semiconductors 12, 959 (1978) |
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Almazov
L.A., Gavrilenko V.I, Zuev V.A., and Litovchenko V.G. Electroreflection Spectra of Implantation-Doped Silicon. Soviet
Physics - Semicond. 12, 913 (1978) |
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Gavrilenko V.I.
and Zuev V.A. Characteristics of the Energy Band Structure of
Ion-Bombarded Layers of GaAs and GaP. Soviet Physics - Semiconductors
12, 570 (1978) |
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Gavrilenko V.I.,
Zuev V.A., and Litovchenko V.G. Electroreflection Investigation of
Departures from Short-Range Order in Surface Layer in Silicon.
Soviet Physics - Solid State. 19, 333 (1977) |
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Gavrilenko V.I.,
Ignatkov V.D., Kalandadze T.M., Litovchenko V.G., and Zuev V.A. Electroreflectance Spectra of Thin Silicon Films.
Thin Solid
Films 37, 201 (1976) |
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Gavrilenko V.I.,
Evstigneev A.M., Zuev V.A., Litovchenko V.G., Snitko O.V., and
Tyagai V.A. Electroreflection Investigation of Characteristic of
Energy Band Structure of a Transition Layer Near the
Surface of Silicon. – Soviet Physics - Semicond.
10,
640 (1976) |
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Gavrilenko V.I.,
Drazhan A.V., Zuev V.A., Korbutyak D.V., and Litovchenko V.G. Influence of Ion-Bombardment on Electroreflection and
Photoluminescence Spectra of n-Type AlxGa1-xAs
Solid Solutions – Soviet Physics - Semicond. 10, 185
(1976) |
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Bletskan D.I.,
Gavrilenko V.I., Zuev V.A., Kopinets I.F., and Litovchenko V.G. Electroreflectance of SnSe Single Crystals. Sov.Physics -
Semiconductors 9, 1321 (1975) |
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Gavrilenko V.I.,
Dubchak A.P., Zuev V.A., Litovchenko V.G., and Lysenko V.S. Electroreflectance Spectra of the Surface of Ion-Bombarded Silicon.
Soviet Physics - Semiconductors 9, 460 (1975) |
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Gavrilenko V.I.,
Zuev V.A., and Litovchenko V.G. Effect of Ion-Implantation on
Electroreflectance spectra of SiO2-Si Structure.
Ukrainian Journal of Physics, 20, 1868 (1975) |
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Dobrovolsky V.N.,
Ninidze G.K., and Gavrilenko V.I. Space Charge Capacity at the
InSb Surface under degeneration of the electron gas.
Ukrainian Journal of Physics, 20, 1824 (1975) |
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Zuev V.A., Gorban
A.P., Peikov P.Kh., Gavrilenko V.I., Romanyuk B.N., and Sukach G.A.
Electronic and Optical properties of SiO2 -Si
Structure. Ukrainian Journal of Physics, 19, 88 (1974) |
Goto:
Books
and Book chapters,
Peer Reviewed Journals,
Proceedings,
Patents
Proceedings
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Kolasinski K. W.,
Harrison I., Gavrilenko A. V., Bonner C. E., Gavrilenko V. I.
Characterization of Chemisorption on Porous Silicon by Sum
Frequency Generation. Proc. of SPIE, vol. 6320, 63200Q (2006) |
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Bonner C. E., Jr.,
Charter S., Lorts A., Adebola O. I., Zhang C., Sun S.-S., Gavrilenko V. I.
Luminescence and Optical Absorption of Conjugated
Poly-Phenylene-Vinylene Polymers. Proc. of SPIE, vol. 6320,
63200J (2006) |
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Gavrilenko V. I.,
Bonner C. E., Jr.
Optical Properties of Conjugated
Poly-Phenylene-Vinylene Polymers.
Proc. of SPIE, vol. 6328, 63280W (2006) |
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Gavrilenko
V. I. Ab initio Molecular Dynamics and Optical Properties of
Organic Molecular Aggregates and Molecular Crystals. Invited.
Int. Conference on Classical and Quantum Dynamical Simulations in
Chemical and Biological Physics, Dresden, Germany, June 2005 |
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Arrington-Peet S., Rakhimov R. R., Gavrilenko V. I.
Electron
Paramagnetic Resonance and Equilibrium Atomic Configurations Studies
of Binuclear Niobium Molecules in Li-Nb Phosphate Glass Dielectrics.
– Bulletin of American Chemical Society, 2005 |
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Noginova N.,
Chen F., Chelule G., and Gavrilenko V. I. Optical, Magnetic and
Transport Effects in LaGa1-xMnxO3:
Experiment and Modeling. Material Research Society Symposium
Proceedings, 295, 407, 2005 |
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Gavrilenko V.I.
Ab initio Theory of Second Harmonic Generation from Semiconductor
Surfaces and Interfaces. Invited.
International Conference
on Optics of Solid Interfaces,
OSI-2001. Physica Status Solidi (a)
188, 1267 (2001) |
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Downer M. C., Jiang Y.,
Lim D., Mantese L., Wilson P. T., Mendoza B. S., and Gavrilenko V.I.
Optical Second Harmonic Spectroscopy of Silicon Surfaces,
Interfaces, and Nano-crystals. Invited. International
Conference on Optics of Solid Interfaces, OSI-2001. Physica Status
Solidi (a) 188, 1371 (2001) |
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Freeman A. J., Wu R. Q.,
Kim M., and Gavrilenko V. I. Magnetism, Magneto-Crystalline
Anisotropy, Magnetostriction and MOKE at Surfaces and Interfaces.
Proceedings of the 1998 International Conference on Magnetism of
Nano-structured Phases. J. Magnetism and Magnetic Materials 203, 1,
(1999) |
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Adolph B., Tenelsen K., Gavrilenko V.
I., and Bechstedt F. Ab initio Calculations of the Optical
Properties of Semiconductors. Proceedings of 23d International
Conference on Physics of Semiconductors, World Scientific, 1996, p.
313 |
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Gavrilenko V. I., Vogl P., and Koch F.
Influence of Hydrogen
Adsorption on the Electron Energy Structure and Densities of States
of Si(001) Surface. Application to Porous Silicon. Proceedings
of 4th International Conference on Formation of
Semiconductor Interfaces. World Scientific, 1994, p.130 |
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Gavrilenko V. I. Electronic Properties of the (001) Surface of Diamond Covered with
Hydrogen. Proceedings of 17-th International Conference on
Defects of Semiconductors, ICDS-17, Gmunden, Austria, 1993, p. 111 |
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Gavrilenko V. I., Vogl
P., and Koch F. Calculation of the Energy Spectrum of Nanometer
Sized Silicon. Material Research Society Symposium Proceedings,
283, 1993, p.431 |
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Koch F., Petrova-Koch
V., Muschik T., Kux A., Mueller F., Gavrilenko V. I., and Moeller F.
Thermal Oxidation of Luminescent Porous Si and its Implications
for the Mechanism of Light Emission. Proceedings of 21st
International Conference on Physics of Semiconductors. World
Scientific, 1992, p. 220 |
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Petrova-Koch V., Muschik
T., Gavrilenko V. I., and Koch F.,. Ton the Mechanism of Light
Emission from Porous Silicon. Proceedings of 21st
International Conference on Physics of Semiconductors. World
Scientific, 1992, p. 272 |
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Gavrilenko V. I., Frolov
S. I., and Litovchenko V. G. Optical Spectroscopy of
Polycrystalline Materials: Theory and Experiment on Group IV
Materials. In Polycrystalline Semiconductors II. Springer
Proceeding in Physics, Vol. 54, 1991, p.379 |
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Contarero A., Martinez
D., Gavrilenko V. I., Cardona M., and Trallero-Ginner C.
Resonant Raman Scattering by One and Two LO-Phonons in AlSb.
Proc.20-th Int. Conf. Phys. Semicond., Thessaloniki, Greece (World
Scientific) 1990, v.3,p.2025 |
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Gavrilenko V. I.,
Litovchenko V. G., and Frolov S. I. Optical Characterization of
Poly- and Microcrystalline Semiconductors. 35. Intern. Sci.,
Meeting, Technical University of Ilmenau, Germany), 1990, p.77 |
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Gavrilenko V. I. and
Frolov S. I. Band Structure and Optical Properties of Silicon
Carbide. SPIE’s International Conference on Physical Concepts of
Materials for Novel Optoelectronic Device Applications. Aachen,
Germany, SPIE, 1990 |
| |
Trallero-Ginner C.,
Gavrilenko V. I., and Cardona M. Deformation Potential Raman
Scattering near the Eo-Gap in AlGaAs Alloy.
Proceedings of XI-th International Conference on Raman Spectroscopy,
London, 1988, p.333 |
| |
Gavrilenko V. I.,
Humlicek J., Garriga M., Klyui N. I., and Litovchenko V. G. Optical
Properties and Electronic Structure of Microcrystalline and
Amorphous Silicon. Proc 19-th Int. Conf. Phys. Semicond. (Warsaw,
1988) v.2, p.1653 |
| |
Gavrilenko V. I., Grekhov A. M., Katrich G. A., and Litovchenko V.
G. Structural Defect Analysis of Ion-Implanted Bulk and
Amorphous Silicon using Optical and Photoelectron Spectroscopy.
Proc. 7-th Int. Conf. Ion Implantation. (Vilnus, Lithuania, 1985)
p.195 |
| |
Gavrilenko V.I.,
Litovchenko V.G., Popov V.G., and Romanyuk B.N. Laser Annealing of the
Surface Layers of Semiconductors. Proc. 26-th Int. Sci. Meeting. (Technical
University Ilmenau, Germany, 1981), p.71 |
| |
Gavrilenko V.I.
and Litovchenko V.G. Study of Defects in Ion Implanted Silicon Structures
using Modulation Spectroscopy. Proc. Int. Conf. on “Ion Beam Modifications
of Materials”. (IBMM), (Budapest, Hungary , 1978) p.1054 |
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Goto:
Books
and Book chapters,
Peer Reviewed Journals,
Proceedings,
Patents
Patents
| |
Mueller B., Gavrilenko V.I., Klyui
N.I., and Litovchenko V. G. Procedure for the Measurements of
Grain-Sizes in Polycrystalline Silicon. Patent DD 256375
AJ. - May 4,1988 (German Democratic Republic) |
Goto:
Books
and Book chapters,
Peer Reviewed Journals,
Proceedings,
Patents
|